View rn1961-rn1966 datasheet:

RN1961~RN1966 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1961,RN1962,RN1963 RN1964,RN1965,RN1966 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process • Complementary to RN2961~RN2966 Equivalent Circuit and Bias Resistor Values Type No. R1 (k?) R2 (k?) RN1961 4.7 4.7 RN1962 10 10 RN1963 22 22 RN1964 47 47 JEDEC ? RN1965 2.2 47 EIAJ ? RN1966 4.7 47 TOSHIBA 2-2J1B Weight: 6.8mg Equivalent Circuit (Top View) Maximum Ratings (Ta = 25° °C) (Q1, Q2 Common) ° ° Characteristic Symbol Rating Unit Collector-base voltage VCBO 50