View rn2101f-rn2106f datasheet datasheet:

RN2101F?RN2106F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2101F,RN2102F,RN2103F RN2104F,RN2105F,RN2106F Switching, Inverter Circuit, Interface Circuit Unit: mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1101F~RN1106F Equivalent Circuit and Bias Resister Values Type No. R1 (k?) R2 (k?) RN2101F 4.7 4.7 RN2102F 10 10 RN2103F 22 22 RN2104F 47 47 RN2105F 2.2 47 RN2106F 4.7 47 JEDEC ? EIAJ ? TOSHIBA 2-2HA1A Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO -50 V RN2101F~2106F Collector-emitter voltage VCEO -50 V RN2101F~2104F -10 Emitter-base voltage VEBO V RN2105F, 210