View rn2101ft-rn2106ft datasheet datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
RN2101FT~RN2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2101FT,RN2102FT,RN2103FT RN2104FT,RN2105FT,RN2106FT Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications • High-density mount is possible because of devices housed in very thin TESM packages. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. • Wide range of resistor values are available to use in various circuit designs. • Complementary to RN1101FT~RN1106FT Equivalent Circuit and Bias Resistor Values C Type No. R1 (k?) R2 (k?) RN2101FT 4.7 4.7 R1 B RN2102FT 10 10 JEDEC ? RN210
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rn2101ft-rn2106ft datasheet Datasheet, Design, MOSFET, Power
rn2101ft-rn2106ft datasheet RoHS, Compliant, Service, Triacs, Semiconductor
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