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rn2107-rn2109_datasheet

RN2107?RN2109 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107,RN2108,RN2109 Switching, Inverter Circuit, Interface Circuit Unit: mm and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1107~RN1109 Equivalent Circuit and Bias Resister Values Type No. R1 (k?) R2 (k?) RN2107 10 47 RN2108 22 47 RN2109 47 22 JEDEC ? EIAJ ? TOSHIBA 2-2H1A Weight: 2.4mg Maximum Ratings (Ta = 25° °C) (Q1, Q2 Common) ° ° Characteristic Symbol Rating Unit Collector-base voltage VCBO -50 V RN2107~RN2109 Collector-emitter voltage VCEO -50 V RN2107 -6 Emitter-base voltage RN2108 VEBO -7 V RN2109 -15 Collector current IC -100 mA Collector powe

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