View rn2107f-rn2109f datasheet datasheet:

RN2107F?RN2109F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107F,RN2108F,RN2109F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1107F~RN1109F Equivalent Circuit and Bias Resister Values Type No. R1 (k?) R2 (k?) RN2107F 10 47 RN2108F 22 47 RN2109F 47 22 JEDEC ? EIAJ ? 2-2HA1A TOSHIBA Maximum Ratings (Ta = 25°C) Weight: 2.3 mg Characteristic Symbol Rating Unit Collector-base voltage VCBO -50 V RN2107F ~RN2109F Collector-emitter voltage VCEO -50 V RN2107F -6 Emitter-base voltage RN2108F VEBO -7 V RN2109F -15 Collector current IC -100 mA Collector pow