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View rn2307-rn2309 datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

rn2307-rn2309

RN2307~RN2309 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2307,RN2308,RN2309 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1307~RN1309 Equivalent Circuit Bias Resistor Values Type No. R1 (k?) R2 (k?) RN2307 10 47 RN2308 22 47 RN2309 47 22 JEDEC ? EIAJ SC-70 TOSHIBA 2-2E1A Weight: 0.006g Maximum Ratings (Ta = 25° °C) ° ° Characteristic Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V RN2307 -6 Emitter-base voltage RN2308 VEBO -7 V RN2309 -15 Collector current IC -100 mA Collector power dissipation PC 100 mW Junc

Keywords

 rn2307-rn2309 Datasheet, Design, MOSFET, Power

 rn2307-rn2309 RoHS, Compliant, Service, Triacs, Semiconductor

 rn2307-rn2309 Database, Innovation, IC, Electricity

 

 
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