View rn2901-2906 ya-b-c-d-e-f sot363 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
RN2901~RN2906 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2901,RN2902,RN2903,RN2904,RN2905,RN2906 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1901~RN1906 Equivalent Circuit and Bias Resistor Values Type No. R1 (k?) R2 (k?) RN2901 4.7 4.7 RN2902 10 10 RN2903 22 22 RN2904 47 47 RN2905 2.2 47 JEDEC ? RN2906 4.7 47 EIAJ ? TOSHIBA 2-2J1A Weight: 6.8mg Equivalent Circuit (Top View) Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO -50 V
Keywords
rn2901-2906 ya-b-c-d-e-f sot363 Datasheet, Design, MOSFET, Power
rn2901-2906 ya-b-c-d-e-f sot363 RoHS, Compliant, Service, Triacs, Semiconductor
rn2901-2906 ya-b-c-d-e-f sot363 Database, Innovation, IC, Electricity
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