View rn2907-2909 yh yi ys sot363 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
RN2907~RN2909 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2907,RN2908,RN2909 Switching, Inverter Circuit, Interface Circuit Unit in mm And Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1907~1909 Equivalent Circuit and Bias Resistor Values Type No. R1 (k?) R2 (k?) RN2907 10 47 JEDEC ? RN2908 22 47 EIAJ ? RN2909 47 22 TOSHIBA 2-2J1A Weight: 6.8 mg Equivalent Circuit (Top View) RN2907~RN2909 Maximum Ratings (Ta = 25° °C) (Q1, Q2 Common) ° ° Characteristic Symbol Rating Unit Collector-base voltage VCBO -50 V RN2907~2909 Collector-emitter volta
Keywords
rn2907-2909 yh yi ys sot363 Datasheet, Design, MOSFET, Power
rn2907-2909 yh yi ys sot363 RoHS, Compliant, Service, Triacs, Semiconductor
rn2907-2909 yh yi ys sot363 Database, Innovation, IC, Electricity
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