View rn2907fe- 2909fe yh yi yj es6 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
RN2907FE~RN2909FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2907FE,RN2908FE,RN2909FE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. • Complementary to RN1907FE~RN1909FE Equivalent Circuit and Bias Resistor Values C Type No. R1 (k?) R2 (k?) RN2907FE 10 47 R1 B RN2908FE 22 47 RN2909FE 47 22 E JEDEC ? JEITA ? TOSHIBA ? Weight: 0.003 g (typ.) Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Symbol
Keywords
rn2907fe- 2909fe yh yi yj es6 Datasheet, Design, MOSFET, Power
rn2907fe- 2909fe yh yi yj es6 RoHS, Compliant, Service, Triacs, Semiconductor
rn2907fe- 2909fe yh yi yj es6 Database, Innovation, IC, Electricity
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