View rn2975 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
RN2975 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2975 Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications. • Two devices are incorporated into an Ultra-Super-Mini (6-pin) package • Incorporating a bias resistor into a transistor reduces the parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Equivalent Circuit and Bias Resistor Values C R1 B E R1: 2.2 k? (Q1, Q2 common) JEDEC ? R2: 10 k? (Q1, Q2 common) JEITA ? TOSHIBA 2-2J1B Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Weight: 0.0068 g (typ.) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCE
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rn2975 Datasheet, Design, MOSFET, Power
rn2975 RoHS, Compliant, Service, Triacs, Semiconductor
rn2975 Database, Innovation, IC, Electricity
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