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rn4987

RN4987 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) RN4987 Switching, Inverter Circuit, Interface Circuit Unit: mm And Driver Circuit Applications Includeing two devices in US6 (Ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Equivalent Circuit and Bias Resister Values R1: 10k? R2: 47k? (Q1, Q2 Common) Q1 Maximum Ratings (Ta = 25° °C) ° ° JEDEC ? Characteristic Symbol Rating Unit EIAJ ? Collector-base voltage VCBO 50 V TOSHIBA 2-2J1A Weight: 6.8mg Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V Collector current IC 100 mA Q2 Maximum Ratings (Ta = 25° °C) ° ° Chara

Keywords

 rn4987 Datasheet, Design, MOSFET, Power

 rn4987 RoHS, Compliant, Service, Triacs, Semiconductor

 rn4987 Database, Innovation, IC, Electricity

 

 
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