View s1232 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Bulletin I0141J 01/01 S1232 PHASE CONTROL THYRISTORS Junction Size : Square 250 mils - IR255SG12H/ S1232 Wafer Size : 4" VRRM Class : 1200 V Passivation Process : Glassivated MESA Reference IR Packaged Part : n. a. Major Ratings and Characteristics Parameters Units Test Conditions VTM Typical On-state Voltage 1.25 V TJ = 25°C, IT = 25 A VDRM/VRRM Direct and Reverse Breakdown Voltage 1200 V TJ = 25°C, IDRM/IRRM = 100 µA (1) IGT Required DC Gate Current to Trigger 5 to 80 mA TJ = 25° C, anode supply = 6 V, resistive load VGT Max. Required DC Gate Voltage to Trigger 2 V TJ = 25° C, anode supply = 6 V, resistive load IH Holding Current Range 5 to 100 mA Anode supply = 6 V, resistive load IL Maximum Latching Current 300 mA Anode supply = 6 V, resistive load (1) Nitrogen flow on
Keywords
s1232 Datasheet, Design, MOSFET, Power
s1232 RoHS, Compliant, Service, Triacs, Semiconductor
s1232 Database, Innovation, IC, Electricity
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