View sfm9014 sam datasheet:

Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -1.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -60V 2 Lower RDS(ON) : 0.362 ? (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -60 Continuous Drain Current (TA=25oC) -1.8 ID A Continuous Drain Current (TA=70oC) -1.1 1 IDM Drain Current-Pulsed -14 A O 2 _ VGS Gate-to-Source Voltage V O EAS Single Pulsed Avalanche Energy mJ 8.3 1 IAR Avalanche Current O -1.8 A 1 EAR Repetitive Avalanche Energy mJ O 0.28 3 dv/dt Peak Diode Recovery dv/dt -5.5 V/ns O * 2.8 W P