View sfr9014 sam datasheet:

Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -5.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 �A (Max.) @ VDS = -60V Lower RDS(ON) : 0.362 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -60 Continuous Drain Current (TC=25oC) -5.3 ID A Continuous Drain Current (TC=100oC) -3.7 1 IDM Drain Current-Pulsed 21 A O 2 _ VGS Gate-to-Source Voltage V O EAS Single Pulsed Avalanche Energy 72 mJ 1 IAR Avalanche Current -5.3 A O EAR Repetitive Avalanche Energy 1 O 2.4 mJ dv/dt Peak Diode Recovery dv/dt 3 -5.5 V/ns O * T