View sgp10n60ruf sam datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
N-CHANNEL IGBT SGP10N60RUF FEATURES TO-220 * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 1.95 V @ Ic=10A * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 600 V Collector-Emitter Voltage VGES 20 V Gate-Emitter Voltage IC 16 A Collector Current @ Tc = 25 10 A Collector Current @ Tc = 100 ICM (1) 30 A Pulsed Collector Current PC 75 W Maximum Power Dissipation @Tc = 25 30 W Maximum Power Dissipation @Tc = 100 Tsc 10 uS Short Circuit Withstand Time Tj -55 ~ 150 Operating Junction Temperature Tstg -55 ~ 150 Storage Temperature Rang
Keywords
sgp10n60ruf sam Datasheet, Design, MOSFET, Power
sgp10n60ruf sam RoHS, Compliant, Service, Triacs, Semiconductor
sgp10n60ruf sam Database, Innovation, IC, Electricity
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