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View sgw10n60rufd sam datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

sgw10n60rufd_sam

CO-PAK IGBT SGW10N60RUFD FEATURES D2-PAK * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 1.95 V @ Ic=10A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 42nS (Typ) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 600 V Collector-Emitter Voltage VGES 20 V Gate-Emitter Voltage IC 16 A Collector Current @ Tc = 25 10 A Collector Current @ Tc = 100 ICM (1) 30 A Pulsed Collector Current IF 12 A Diode Continuous Forward Current @ Tc = 100 IFM 92 A Diode Maximum Forward Current PD 75 W Maximum Power Dissipation @Tc = 25 30 W Maximum Power Dissipation

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