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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

smbd914

Silicon Switching Diode SMBD 914 For high-speed switching applications Type Marking Ordering Code Pin Configuration Package1) (tape and reel) SMBD 914 s5D Q68000-A625 SOT-23 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 70 V Peak reverse voltage VRM 100 Forward current IF 250 mA Surge forward current, t = 1 µs IFS 4.5 A Total power dissipation, TS =54?C Ptot 370 mW Junction temperature Tj 150 ?C Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ? 330 K/W Junction - soldering point Rth JS ? 260 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm ? 40 mm ? 1.5 mm/6 cm2 Cu. 5.91 Semiconductor Group 1 SMBD 914 Electrical Characteristics at TA = 25 ?C, unless otherwi

Keywords

 smbd914 Datasheet, Design, MOSFET, Power

 smbd914 RoHS, Compliant, Service, Triacs, Semiconductor

 smbd914 Database, Innovation, IC, Electricity

 

 
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