View smbt6427 datasheet:

NPN Silicon Darlington Transistor SMBT 6427 For general amplifier applications High collector current High current gain Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 SMBT 6427 s1V Q68000-A8320 B E C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0 40 Emitter-base voltage VEB0 12 Collector current IC 500 mA Peak collector current ICM 800 Total power dissipation, TS =74 ?C Ptot 360 mW Junction temperature Tj 150 ?C Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ? 280 K/W Junction - soldering point Rth JS ? 210 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm ? 40 mm ? 1.5 mm/6 cm2