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SO5401 SMALL SIGNAL PNP TRANSISTORS Type Marking SO5401 P33 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING 2 CIRCUITS GENERAL PURPOSE AND HIGH VOLTAGE 3 AMPLIFIER 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) -160 V V Collector-Emitter Voltage (I = 0) -150 V CEO B VEBO Emitter-Base Voltage (IC = 0) -5 V I Collector Peak Current -0.6 A CM o Ptot Total Dissipation at Tc = 25 C 200 mW o Tstg Storage Temperature -65 to 150 C o T Max. Operating Junction Temperature 150 C j 1/4 October 1997 SO5401 THERMAL DATA o Rthj-amb • Thermal Resistance Junction-Ambient Max 620 C/W o Rth j-SR • Thermal Resistance Junction-Substrate