View spb47n1l datasheet:

Preliminary Data SPP 47N10L SIPMOS? Power Transistor Product Summary Features Drain source voltage 100 V VDS • N channel Drain-Source on-state resistance 0.026 RDS(on) ? • Enhancement mode Continuous drain current 47 A ID • Avalanche rated • Logic Level • dv/dt rated • 175?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S SPP47N10L P-TO220-3-1 Q67040-S4177 Tube SPB47N10L P-TO263-3-2 Q67040-S4176 Tape and Reel Maximum Ratings, at Tj = 25 ?C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current A ID TC = 25 ?C 47 TC = 100 ?C 33 Pulsed drain current 188 IDpulse TC = 25 ?C Avalanche energy, single pulse 400 mJ EAS ID = 47 A, VDD = 25 V, RGS = 25 ? 17.5 Avalanche energy, periodic limited by Tjmax