View ss9013 sam datasheet:

SS9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE TO-92 RADIOS IN CLASS B PUSH-PULL OPERATION. • High total power dissipation. (PT=625mW) • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excelent hFE linearity. ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 mA Collector Current IC 500 mW Collector Dissipation PC 625 Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC =100 , IE =0 40 V Collector-Emitter Breakdown Voltage BVCEO IC