View ssd2004 sam datasheet:

8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 S2 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 G2 Product Summary SSD2004 BVdss Rds(on) ID N-Channel 20V 0.125 3.0A S1 D2 D2 P-Channel -20V 0.20 -2.5A N & P-Channel MOSFET Absolute Maximum Ratings Symbol Characteristic N-Channel P-Channel Units VDSS Drain-to-Source Voltage V 20 -20 Continuous Drain Current TA=25 3.0 -2.5 ID A Continuous Drain Current TA=70 2.5 -2.0 IDM Drain Current-Pulsed A 10.0 -10.0 VGS Gate-to-Source Voltage 20 20 V Total Power Dissipation ( TA=25 ) 2.0 PD W ( TA=70 ) 1.3 TJ , TSTG Operating and Junction Stor