View ssd2006 sam datasheet:

8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 D2 D2 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 G2 Product Summary SSD2006 BVdss Rds(on) ID N-Channel 30V 0.05 5.4A S1 S2 P-Channel -30V 0.10 -3.8A N & P-Channel MOSFET Absolute Maximum Ratings Symbol Characteristic N-Channel P-Channel Units VDSS Drain-to-Source Voltage V 30 -30 Continuous Drain Current TA=25 5.4 -3.8 ID A Continuous Drain Current TA=70 4.3 -3.0 IDM Drain Current-Pulsed A 14.0 -14.0 VGS Gate-to-Source Voltage 20 20 V Total Power Dissipation ( TA=25 ) 2.4 PD W ( TA=70 ) 1.5 TJ , TSTG Operating and Junction Stora