View ssd2008 sam datasheet:

8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 S2 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 G2 Product Summary SSD2008 BVdss Rds(on) ID N-Channel 30V 0.05 3.5A S1 D2 D2 P-Channel -30V 0.10 -3.5A N & P-Channel MOSFET Absolute Maximum Ratings Symbol Characteristic N-Channel P-Channel Units VDSS Drain-to-Source Voltage V 30 -30 Continuous Drain Current TA=25 3.5 -3.5 ID A Continuous Drain Current TA=70 2.8 -2.8 IDM Drain Current-Pulsed A 14.0 -14.0 VGS Gate-to-Source Voltage 20 20 V Total Power Dissipation ( TA=25 ) 2.0 PD W ( TA=70 ) 1.3 TJ , TSTG Operating and Junction Stora