View ssd2011 sam datasheet:

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times Low Input Capacitance S1 Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID D1 D1 SSD2011 - 60V 0.280 - 2.0A P-Channel MOSFET Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V - 60 Continuous Drain Current TA=25 - 2.0 ID A Continuous Drain Current TA=70 - 1.6 IDM Drain Current-Pulsed (2) A - 10.0 VGS Gate-to-Source Voltage 20 V Total Power Dissipation ( TA=25 ) 2.0 PD W ( TA=70 ) 1.3 TJ , TSTG Operating and Junction Storage - 55 to +150 Temperature Range Thermal Resistan