View ssd2019 sam datasheet:

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times S1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID SSD2019 -20V 0.11 -3.4A D1 D1 P-Channel MOSFET Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -20 Continuous Drain Current TA=25 -3.4 ID A Continuous Drain Current TA=70 -2.7 IDM Drain Current-Pulsed A -8.0 VGS Gate-to-Source Voltage 12 V Total Power Dissipation ( TA=25 ) 2.0 PD W ( TA=70 ) 1.3 TJ , TSTG Operating and Junction Storage - 55 to +150 Temperature Range Thermal Resistance Symbol Ch