View ssd2101 sam datasheet:

8 SOIC FEATURES 1 8 N/C D S 2 7 D 3 6 S D Lower RDS(ON) 4 5 G D Improved Inductive Ruggedness Top View Fast Swtching Times D D D D Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G Product Summary Part Number BVdss Rds(on) ID S S SSD2101 30V 0.03 7.0A N-Channel MOSFET Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 30 Continuous Drain Current TA=25 7.0 ID A Continuous Drain Current TA=70 5.8 IDM Drain Current-Pulsed A 20.0 VGS Gate-to-Source Voltage 20 V Total Power Dissipation ( TA=25 ) 2.5 PD W ( TA=70 ) 1.6 TJ , TSTG Operating and Junction Storage - 55 to +150 Temperature Range Thermal Resistance Symbol Characteristic Typ