View ssd2106 sam datasheet:

8 SOIC FEATURES 1 8 S D S 2 7 D 3 6 S D Lower RDS(ON) 4 5 G D Improved Inductive Ruggedness Top View Fast Swtching Times S S S Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G Product Summary Part Number BVdss Rds(on) ID D D D D SSD2106 - 20V 0.25 - 2.5A P-Channel MOSFET Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V - 20 Continuous Drain Current TA=25 - 2.5 ID A Continuous Drain Current TA=70 - 2.0 IDM Drain Current-Pulsed - 10.0 A VGS Gate-to-Source Voltage 20 V Total Power Dissipation ( TA=25 ) 2.5 PD W ( TA=70 ) 1.6 TJ , TSTG Operating and Junction Storage - 55 to +150 Temperature Range Thermal Resistance Symbo