View ssh10n60a sam datasheet:

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 0.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area µA Lower Leakage Current : 25 (Max.) @ VDS = 600V ? Low RDS(ON) : 0.646 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 600 o C Continuous Drain Current (TC=25 ) 10 ID A Continuous Drain Current (TC=100 oC ) 6.3 IDM Drain Current-Pulsed 1 40 A O _ 30 VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 mJ 545 O IAR Avalanche Current 1 10 A O EAR Repetitive Avalanche Energy 1 mJ 19.3 O 3 dv/dt Peak Diode Recovery dv/dt V/ns 3.0 O o Total Pow