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View ssp10n60a sam datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

ssp10n60a_sam

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology ? RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9 A Improved Gate Charge Extended Safe Operating Area ľA Lower Leakage Current : 25 (Max.) @ VDS = 600V Low RDS(ON) : 0.646 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 600 Continuous Drain Current (TC=25 o ) C 9 ID A Continuous Drain Current (TC=100 oC 5.7 ) IDM Drain Current-Pulsed 1 36 A O VGS Gate-to-Source Voltage _ 30 V EAS Single Pulsed Avalanche Energy 2 mJ O 442 IAR Avalanche Current 1 9 A O EAR Repetitive Avalanche Energy 1 15.6 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns 3.0 O Total Power Dissip

Keywords

 ssp10n60a sam Datasheet, Design, MOSFET, Power

 ssp10n60a sam RoHS, Compliant, Service, Triacs, Semiconductor

 ssp10n60a sam Database, Innovation, IC, Electricity

 

 
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