View ssp10n60a sam datasheet:

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology ? RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9 A Improved Gate Charge Extended Safe Operating Area µA Lower Leakage Current : 25 (Max.) @ VDS = 600V Low RDS(ON) : 0.646 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 600 Continuous Drain Current (TC=25 o ) C 9 ID A Continuous Drain Current (TC=100 oC 5.7 ) IDM Drain Current-Pulsed 1 36 A O VGS Gate-to-Source Voltage _ 30 V EAS Single Pulsed Avalanche Energy 2 mJ O 442 IAR Avalanche Current 1 9 A O EAR Repetitive Avalanche Energy 1 15.6 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns 3.0 O Total Power Dissip