View stgb20nb32lz -1 datasheet:

STGB20NB32LZ STGB20NB32LZ-1 N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH™ IGBT TYPE VCES VCE(sat) IC STGB20NB32LZ CLAMPED < 2.0 V 20 A STGB20NB32LZ-1 CLAMPED < 2.0 V 20 A POLYSILICON GATE VOLTAGE DRIVEN 3 LOW THRESHOLD VOLTAGE 3 1 2 LOW ON-VOLTAGE DROP 1 HIGH CURRENT CAPABILITY D2PAK I2PAK HIGH VOLTAGE CLAMPING FEATURE SURFACE-MOUNTING D?PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”) DESCRIPTION INTERNAL SCHEMATIC DIAGRAM Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter z