View stgb20nb37lz datasheet:

STGB20NB37LZ N-CHANNEL CLAMPED 20A - D?PAK INTERNALLY CLAMPED PowerMESH™ IGBT TYPE VCES VCE(sat) IC STGB20NB37LZ CLAMPED < 2.0 V 20 A POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP 3 LOW GATE CHARGE 1 HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE ADD SUFFIX “T4” FOR ORDERING IN TAPE & D?PAK REEL DESCRIPTION INTERNAL SCHEMATIC DIAGRAM Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has de- signed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very pre- cise active clamping while the gate-emitter zener supplies an ESD protection. APPLICATIONS AUTOMOTIVE IGNITION ORDERING INFORMATION SALES TYPE MA