View stgp3nb60h datasheet:

STGP3NB60H N-CHANNEL 3A - 600V / TO-220 PowerMESH™ IGBT TYPE VCES VCE(sat) IC STGP3NB60H 600 V < 2.8 V 3 A HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE 3 2 HIGH CURRENT CAPABILITY 1 VERY HIGH FREQUENCY OPERATION TO-220 CO-PACKAGED WITH TURBOSWITCHT TYPICAL SHORT CIRCUIT WITHSTAND TIME 5MICROS S-family, 4 micro H family ANTIPARALLEL DIODE INTERNAL SCHEMATIC DIAGRAM DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has de- signed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized for high frequency applications (up to 50kHz)in order to achieve very high switching performance