View sth15na50 datasheet:

STH15NA50/FI STW15NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STH15NA50 500 V < 0.4 ? 14.6 A STH15NA50FI 500 V < 0.4 ? 9.3 A TO-247 STW15NA50 500 V < 0.4 ? 14.6 A TYPICAL R = 0.33 ? DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 3 2 100% AVALANCHE TESTED 1 REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD 3 3 2 2 DESCRIPTION 1 This series of POWER MOSFETS represents the TO-218 1 ISOWATT218 most advanced high voltage technology. The op- timized cell layout coupled with a new proprietary edge termination concur to give the device low INTERNAL SCHEMATIC DIAGRAM R and gate charge, unequalled ruggedness DS(on) and superior switching performance. APPLICATI