View stq1hnc60 datasheet:

STQ1HNC60 N-CHANNEL 600V - 7? - 0.4A TO-92 PowerMesh™II MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STQ1HNC60 600 V < 8 ? 0.4 A TYPICAL RDS(on) = 7 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-92 DESCRIPTION Using the latest high voltage MESH OVERLAY™II process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout INTERNAL SCHEMATIC DIAGRAM coupled with the Company’s proprietary edge termi- nation structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. APPLICATIONS SWITCH MODE LOW POWER SUPPIES (SMPS) CFL ABSOLUTE M