View stq1nc60r datasheet:

STQ1NC60R N-CHANNEL 600V - 12? - 0.3ATO-92 PowerMESH™II Power MOSFET TYPE VDSS RDS(on) ID STQ1NC60R 600 V < 15 ? 0.3 A TYPICAL RDS(on) = 12 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-92 TO-92 BULK (AMMOPACK) DESCRIPTION Using the latest high voltage MESH OVERLAY™II process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termi- nation structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and INTERNAL SCHEMATIC DIAGRAM unrivalled gate charge and switching characteris- tics. APPLICATIONS LOW SWITCH MODE POWER SUPPLIES (SMPS) B