View stu13nb60 datasheet:

STU13NB60 N-CHANNEL ENHANCEMENT MODE PowerMESH? MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STU13NB60 600 V < 0.45 ? 12.6 A TYPICAL R = 0.4 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 ± 30V GATE TO SOURCE VOLTAGE RATING 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAY? Max220 process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest R per area, exceptional avalanche INTERNAL SCHEMATIC DIAGRAM DS(on) and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS SWITCH MOD