View sty100ns20fd datasheet:

STY100NS20FD N-CHANNEL 200V - 0.022? - 100A Max247 MESH OVERLAY™ Power MOSFET TYPE VDSS RDS(on) ID STY100NS20FD 200V < 0.024? 100 A TYPICAL RDS(on) = 0.022? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED 3 2 ± 20V GATE TO SOURCE VOLTAGE RATING 1 LOW INTRINSIC CAPACITANCE FAST BODY-DRAIN DIODE:LOW trr, Qrr Max247 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patented STrip layout cou- INTERNAL SCHEMATIC DIAGRAM pled with the Company’s proprietary edge termina- tion structure, gives the lowest RDS(ON) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteri