View sd2903 datasheet:

SD2903 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRELIMINARY DATA .2 - 500 MHz .30 WATTS .28 VOLTS .13 dB MIN. AT 400 MHz .CLASS A OR AB .230 x .360 4L FL (M229) ORDER CODE BRANDING SD2903 SD2903 DESCRIPTION PIN CONNECTION The SD2903 is a gold metallized N-channel MOS field effect RF power transistor. The SD2903 is intended for use in 28V DC large signal applications up to 400 MHz. 1. Drain 3. Gate 2. Drain 4. Gate 5. Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit V Drain-Source Voltage 65 V DSS V 65 V DGR Drain-Gate Voltage (R = 1.0 M?) GS V Gate-Source Voltage +/- 20 V GS I Drain Current 5.0 A D P 81.4 W DISS Power Dissipation (T ? 25°C ) heatsink °C T Junction Temperature +200 J °C T Storage Temperature - 6