View stb11nb40 datasheet:

STB11NB40 N - CHANNEL ENHANCEMENT MODE PowerMESH? MOSFET TYPE VDSS RDS(on) ID STB11NB40 400 V < 0.55 ? 10.7 A TYPICAL R = 0.48 ? DS(on) EXTREMELY HIGH dV/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION 3 3 2 1 1 Using the latest high voltage MESH OVERLAY? process, SGS-Thomson has designed an advanced family of power MOSFETs with I2PAK D2PAK outstanding performances. The new patent TO-262 TO-263 pending strip layout coupled with the Company’s (suffix ”-1”) (suffix ”T4”) proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristics. APPLICATIONS HIGH CURRENT, HIGH