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stb160nf02l

STB160NF02L N-CHANNEL 20V - 0.0018? - 160A D2PAK STripFET™ POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STB160NF02L 20 V < 0.0027 ? 160 A TYPICAL RDS(on) = 0.0018? LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE VERY LOW GATE CHARGE 3 100% AVALANCHE TESTED 1 DESCRIPTION D2PAK This Power MOSFET is the latest development of (TO-263) STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting tran- sistor shows extremely high packing density with ultra low on-resistance, superior switching charac- INTERNAL SCHEMATIC DIAGRAM teristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. This device is particularly suitable for high current, low voltage switching application where efficiency is crucial.

Keywords

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