View stb3na69-1 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
STB3NA60-1 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STB3NA60-1 600 V < 4 ? 2.9 A TYPICAL R = 0.7 ? DS(on) AVALANCHERUGGED TECHNOLOGY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 LOW INTRINSIC CAPACITANCES 2 1 GATE CHARGE MINIMIZED APPLICATIONS I2PAK HIGH CURRENT, HIGH SPEED SWITCHING TO-262 SWITCH MODE POWER SUPPLIES (SMPS) DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 600 V V Drain- gate Voltage (R = 20 k?) 600 V DGR GS VGS Gate-source Voltage ± 30 V
Keywords
stb3na69-1 Datasheet, Design, MOSFET, Power
stb3na69-1 RoHS, Compliant, Service, Triacs, Semiconductor
stb3na69-1 Database, Innovation, IC, Electricity
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