View stb3nb60 datasheet:

STB3NB60 ? N - CHANNEL 600V - 3.3? - 3.3A - D2PAK/I2PAK PowerMESH? MOSFET TYPE VDSS RDS(on) ID STB3NB60 600 V <3.6 ? 3.3 A TYPICAL R = 3.3 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 1 1 DESCRIPTION D2PAK I2PAK Using the latest high voltage MESH OVERLAY? TO-263 TO-262 process, SGS-Thomson has designed an (Suffix ”T4”) (Suffix ”-1”) advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristics. APPLICATIONS HIGH