View stb55ne06 datasheet:

STB55NE06 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE? ” POWER MOSFET TYPE VDSS RDS(on) ID STB55NE06 60 V < 0.022 ? 55 A TYPICAL R = 0.019 ? DS(on) EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED o LOW GATE CHARGE 100 C HIGH dv/dt CAPABILITY 3 APPLICATION ORIENTED 1 CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT D2PAK SALES OFFICE TO-263 (suffix ”T4”) DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on- INTERNAL SCHEMATIC DIAGRAM resistance, rugged avalance characteristics and less critical alignment steps therefore a remark- able manufacturingreproducibility. APPLICATIONS DC MOTOR CONTROL DC-DC &