View stb55ne06l datasheet:

STB55NE06L N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE? " POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STB55NE06L 60 V < 0.022 ? 55A TYPICAL R = 0.018 ? DS(on) EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED 3 CHARACTERIZATION 1 FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE D2PAK TO-263 DESCRIPTION (suffix "T4") This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size? " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics INTERNAL SCHEMATIC DIAGRAM and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SPEED SW