View stb60n06-14 datasheet:

STB60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STB60N06-14 60 V < 0.014 ? 60 A TYPICAL R = 0.012 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE 3 3 VERY HIGH CURRENT CAPABILITY 2 1 1 APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE I2PAK (TO-262) POW

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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050