View stb60ne03l datasheet:

STB60NE03L-10 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE? ” POWER MOSFET TYPE VDSS RDS(o n) ID STB60NE03L-10 30 V < 0.010 ? 60 A TYPICAL R = 0.007 ? DS(on) EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED o LOW GATE CHARGE 100 C APPLICATION ORIENTED 3 CHARACTERIZATION 1 FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE D2PAK TO-263 DESCRIPTION (suffix ”T4”) This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalance characteristics and INTERNAL SCHEMATIC DIAGRAM less critical alignment steps therefore a remark- able manufacturingreproducibility. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLE