View stb60ne03l-12 datasheet:

STB60NE03L-12 ® N - CHANNEL 30V - 0.009 ? - 60A - D2PAK "SINGLE FEATURE SIZE? " POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STB60NE03L-12 30 V <0.012 ? 60 A TYPICAL R = 0.009 ? DS(on) AVALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 3 175oC OPERATING TEMPERATURE 1 APPLICATION ORIENTED D2PAK CHARACTERIZATION TO-263 (Suffix "T4") DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size? " strip-based process. The resulting transistor shows extremely high packing density INTERNAL SCHEMATIC DIAGRAM for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing