View stb6nb50- datasheet:

STB6NB50 ? N - CHANNEL 500V - 2.5? - 3.8A - D2PAK/I2PAK PowerMESH? MOSFET TYPE VDSS RDS(on) ID STB6NB50 500 V < 5.8 ? 3.8 A TYPICAL R = 2.5 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 VERY LOW INTRINSIC CAPACITANCES 1 3 2 GATE CHARGE MINIMIZED 1 DESCRIPTION Using the latest high voltage MESH OVERLAY? I2PAK D2PAK process, STMicroelectronics has designed an TO-262 TO-263 advanced family of power MOSFETs with (suffix ”-1”) (Suffix ”T4”) outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristics. APPLICATIO