View stb80ne03l datasheet:

STB80NE03L-06 ? N - CHANNEL 30V - 0.005? - 80A - D2PAK STripFET? POWER MOSFET TYPE VDSS RDS(o n) ID STB80NE03L-06 30 V < 0.006 ? 80 A TYPICAL R = 0.005 ? DS(on) EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED o LOW GATE CHARGE 100 C APPLICATION ORIENTED 3 CHARACTERIZATION 1 FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE D2PAK TO-263 DESCRIPTION (suffix ”T4”) This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size? ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics INTERNAL SCHEMATIC DIAGRAM and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLEN